Thick source and drain electrodes

Tuesday, Oct 25, 2016
by ssaluja

InAs nanowire double quantum dot formed by connecting a single InAs nanowire to thick source and drain electrodes. The double quantum dot is formed by electrically biasing the gate electrodes beneath it.

Fabricated using the Elionix electron beam lithography system and Sharon Vacuum evaporation system (Jiri Stehlik).